Label-free DNA detection using silver nanoprism decorated silicon nanoparticles: Effect of silicon nanoparticle size and doping levels.

In the present work, we have fabricated silver nanoprism (AgNPrs)/silicon nanoparticle (SiNPs) hybrid arrays for highly sensitive detection of biomolecules via surface-enhanced Raman spectroscopy (SERS) technique. SiNPs having 7 to 37 nm in size and with phosphorous doping varying from 1 × 1019 to 1 × 1020 cm-3 were synthesized in nonthermal plasma synthesis. SiNPs were further immobilized on glass substrates using spin-coating, followed by deposition of AgNPrs using the drop-casting method. SERS studies showed that AgNPrs/SiNPs hybrid arrays exhibit substantial amplification of fingerprint bands of rhodamine 6G (R6G) compared to bare silicon as the reference. Raman signal intensity was found to be dependent on the size of SiNPs, with the largest nanoparticles exhibiting the highest SERS enhancement. In addition, an increase in phosphorous doping concentration was found to reduce R6G peak intensities. AgNPrs/SiNPs hybrid arrays showed excellent stability over time and high spot-to-spot reproducibility as well. Moreover, hybrid arrays enabled DNA detection through intense vibrational modes of human genomic DNA, with a lower detection limit of 1.5 pg/µL; indicating that AgNPrs/SiNPs sensors can serve as a reliable and cost-effective biosensing platform for rapid and label-free analysis of biomolecules.

Laser ablation fabrication of ap-NiO/n-Si heterojunction for broadband and self-powered UV-Visible-NIR photodetection.

We report on the optoelectronic characteristics ofp-NiO/n-Si heterojunction photodiode for broadband photodetection, fabricated by depositing ap-type NiO thin film onto a commercialn-type silicon substrate using pulsed laser deposition (PLD) technique. The structural properties of the PLD-grownp-NiO material were analysed by means of x-ray diffraction and x-ray photoelectron spectroscopy, confirming its crystalline nature and revealing the presence of Ni vacancies, respectively. Hall measurements confirmed thep-type semiconducting nature of the NiO thin film having a carrier concentration of 8.4 × 1016cm-3. The current-voltage (I-V) characteristics of thep-NiO/n-Si heterojunction photodevice were investigated under different wavelengths ranging from UV to NIR. The self-bias properties under different illuminations of light were also explored systematically. Under self-bias condition, the photodiode exhibits excellent responsivities of 12.5 mA W-1, 24.6 mA W-1and 30.8 mA W-1with illumination under 365 nm, 485 nm, and 850 nm light, respectively. In addition, the time dependency of the photoresponse of the fabricated photodevice has also been investigated and discussed thoroughly.

Anisotropic Magnetic Resonance in Random Nanocrystal Quantum Dot Ensembles.

Magnetic anisotropy critically determines the utility of magnetic nanocrystals (NCs) in new nanomagnetism technologies. Using angular-dependent electron magnetic resonance (EMR), we observe magnetic anisotropy in isotropically arranged NCs of a nonmagnetic material. We show that the shape of the EMR angular variation can be well described by a simple model that considers magnetic dipole-dipole interactions between dipoles randomly located in the NCs, most likely due to surface dangling bonds. The magnetic anisotropy results from the fact that the energy term arising from the magnetic dipole-dipole interactions between all magnetic moments in the system is dominated by only a few dipole pairs, which always have an anisotropic geometric arrangement. Our work shows that magnetic anisotropy may be a general feature of NC systems containing randomly distributed magnetic dipoles.

Why co-catalyst-loaded rutile facilitates photocatalytic hydrogen evolution.

As the conduction band edge of rutile is close to the reduction potential of hydrogen, there is a long-lasting discussion on whether molecular hydrogen can be evolved from this semiconductor. Our study on methanol photoreforming in the ultra-high vacuum reveals that photocatalysts comprising a TiO2(110) single crystal decorated with platinum clusters indeed enable the evolution of H2. This is attributed to a new type of mechanism, in which the co-catalyst acts as a recombination center for hydrogen and not as a reduction site of a photoreaction. This mechanism is an alternative pathway to the commonly used mechanism derived from photoelectrochemistry and must particularly be considered for systems, in which reducible semiconductors enable the surface diffusion of hydrogen species.

Intra- and inter-nanocrystal charge transport in nanocrystal films.

The exploitation of semiconductor nanocrystal (NC) films in novel electronic and optoelectronic applications requires a better understanding of charge transport in these systems. Here, we develop a model of charge transport in NC films, based on a generalization of the concept of transport energy level ET to nanocrystal assemblies, which considers both intra- and inter-NC charge transfer processes. We conclude that the role played by each of these processes can be probed from temperature-dependent measurements of charge carrier density n and mobility µ in the same films. The model also enables the determination of the position of the Fermi energy level EF with respect to ET, an important parameter of charge transport in semiconductor materials, from the temperature dependence of n. Moreover, we provide support to an essentially temperature-independent intra-NC charge carrier mobility, considered in the transport level concept, and consequently the frequently observed temperature dependence of the overall mobility µ in NC films results from a temperature variation of the inter-NC charge transport processes. Importantly, we also conclude that the temperature dependence of conductivity in NC films should result in general from a combination of temperature variations of both n and µ. By applying the model to solution-processed Si NC films, we conclude that transport within each NC is similar to that in amorphous Si (a-Si), with charges hopping along band tail states located below the conduction band edge. For Si NCs, we obtain values of ET - EF of ∼0.25 eV. The overall mobility µ in Si NC films is significantly further reduced with respect to that typically found in a-Si due to the additional transport constraints imposed by inter-NC transfer processes inherent to a nanoparticulate film. Our model accounting for inter- and intra-NC charge transport processes provides a simple and more general description of charge transport that can be broadly applied to films of semiconductor NCs.

Silicon Nanocrystal Superlattice Nucleation and Growth.

Colloidal dodecene-passivated silicon (Si) nanocrystals were dispersed in hexane or chloroform and deposited onto substrates as face-centered cubic superlattices by slowly evaporating the solvent. The uniformity of the nanocrystals enables extended order; however, the solvent and the evaporation protocol significantly influence the self-assembly process, determining the morphology of the films, the extent of order, and the superlattice orientation on the substrate. Chloroform yielded superlattices with step-flow growth morphologies and (111)SL, (100)SL, and (110)SL orientations. Hexane led to mostly island morphologies when evaporated at room temperature with exclusively (111)SL orientations. Higher evaporation temperatures led to more extensive step-flow deposition. A model for the surface diffusion of nanocrystals adsorbed on the superlattice surface is developed.

Ethanol surface chemistry on MBE-grown GaN(0001), GaOx/GaN(0001), and Ga2O3(2¯01).

In this work, ethanol is used as a chemical probe to study the passivation of molecular beam epitaxy-grown GaN(0001) by surface oxidation. With a high degree of oxidation, no reaction from ethanol to acetaldehyde in temperature-programmed desorption experiments is observed. The acetaldehyde formation is attributed to a mechanism based on α-H abstraction from the dissociatively bound alcohol molecule. The reactivity is related to negatively charged surface states, which are removed upon oxidation of the GaN(0001) surface. This is compared with the Ga2O3(2¯01) single crystal surface, which is found to be inert for the acetaldehyde production. These results offer a toolbox to explore the surface chemistry of nitrides and oxynitrides on an atomic scale and relate their intrinsic activity to systems under ambient atmosphere.

Nonthermal Plasma Synthesis of Nanocrystals: Fundamental Principles, Materials, and Applications.

Nonthermal plasmas have emerged as a viable synthesis technique for nanocrystal materials. Inherently solvent and ligand-free, nonthermal plasmas offer the ability to synthesize high purity nanocrystals of materials that require high synthesis temperatures. The nonequilibrium environment in nonthermal plasmas has a number of attractive attributes: energetic surface reactions selectively heat the nanoparticles to temperatures that can strongly exceed the gas temperature; charging of nanoparticles through plasma electrons reduces or eliminates nanoparticle agglomeration; and the large difference between the chemical potentials of the gaseous growth species and the species bound to the nanoparticle surfaces facilitates nanocrystal doping. This paper reviews the state of the art in nonthermal plasma synthesis of nanocrystals. It discusses the fundamentals of nanocrystal formation in plasmas, reviews practical implementations of plasma reactors, surveys the materials that have been produced with nonthermal plasmas and surface chemistries that have been developed, and provides an overview of applications of plasma-synthesized nanocrystals.

Influence of the surface termination on the light emission of crystalline silicon nanoparticles.

The light emission properties of silicon crystalline nanoparticles (SiNPs) have been investigated using steady-state and time-resolved photoluminescence measurements carried out at 12 K and at room temperature. To enable a comparative study of the role of surface terminal groups on the optical properties, we investigated SiNPs-H ensembles with the same mean NP diameter but differing on the surface termination, namely organic-functionalized with 1-dodecene (SiNPs-C12) and H-terminated (SiNPs-H). We show that although the spectral dependence of the light emission is rather unaffected by surface termination, characterized by a single broad band peaking at ∼1.64 eV, both the exciton recombination lifetimes and quantum yields display a pronounced dependence on the surface termination. Exciton lifetimes and quantum yields are found to be significantly lower in SiNPs-H compared SiNPs-C12. This difference is due to distinct non-radiative recombination probabilities resulting from inter-NP exciton migration, which in SiNPs-C12 is inhibited by the energy barriers imposed by the bulky surface groups. The surface groups of organic-terminated SiPs are responsible for the inhibition of inter-NP exciton transfer, yielding a higher quantum yield compared to SiNPs-H. The surface oxidation of SiNPs-C12 leads to the appearance of a phenomenon of an exciton transference from to the Si core to oxide-related states that contribute to light emission. These excitons recombine radiatively, explaining why the emission quantum of the organic-terminated SiNPs is the same after surface oxidation of SiNPs-C12.

Novel back-reflector architecture with nanoparticle based buried light-scattering microstructures for improved solar cell performance.

A new back-reflector architecture for light-management in thin-film solar cells is proposed that includes a morphologically smooth top surface with light-scattering microstructures buried within. The microstructures are pyramid shaped, fabricated on a planar reflector using TiO2 nanoparticles and subsequently covered with a layer of Si nanoparticles to obtain a flattened top surface, thus enabling growth of good quality thin-film solar cells. The optical properties of this back-reflector show high broadband haze parameter and wide angular distribution of diffuse light-scattering. The n-i-p amorphous silicon thin-film solar cells grown on such a back-reflector show enhanced light absorption resulting in improved external quantum efficiency. The benefit of the light trapping in those solar cells is evidenced by the gains in short-circuit current density and efficiency up to 15.6% and 19.3% respectively, compared to the reference flat solar cells. This improvement in the current generation in the solar cells grown on the flat-topped (buried pyramid) back-reflector is observed even when the irradiation takes place at large oblique angles of incidence. Finite-difference-time-domain simulation results of optical absorption and ideal short-circuit current density values agree well with the experimental findings. The proposed approach uses a low cost and simple fabrication technique and allows effective light manipulation by utilizing the optical properties of micro-scale structures and nanoscale constituent particles.

Resonant electronic coupling enabled by small molecules in nanocrystal solids.

The future exploitation of the exceptional properties of nanocrystal (NC) thin films deposited from liquid dispersions of nanoparticles relies upon our ability to produce films with improved electrical properties by simple and inexpensive means. Here, we demonstrate that the electronic conduction of solution-processed NC films can be strongly enhanced without the need of postdeposition treatments, via specific molecules adsorbed at the surfaces of adjacent NCs. This effect is demonstrated for Si NC films doped with the strong molecular oxidizing agent tetrafluoro-tetracyanoquinodimethane (F4-TCNQ). Density functional calculations were carried out with molecule-doped superlattice solid models. It is shown that, when populated by electrons, hybrid molecule/NC states edge (and may actually resonate with) the conduction-band states of the NC solid. This provides extra electronic connectivity across the NC network as the molecules effectively flatten the electronic potential barriers for electron transfer across the otherwise vacuum-filled network interstitialcies.